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PD - 94266
SMPS MOSFET
IRLR3714 IRLU3714
HEXFET(R) Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits
l l l
VDSS
20V
RDS(on) max
20m
ID
36A
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
D-Pak IRLR3714
I-Pak IRLU3714
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC ID @ TC I DM PD @TC PD @TC
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 20 36 31 140 47 33 0.31 -55 to + 175
Units
V V A W W W/C C
= 25C = 70C = 25C = 70C
TJ , TSTG
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- --- ---
Max.
3.2 50 110
Units
C/W
Notes through are on page 10
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1
06/15/01
IRLR3714/IRLU3714
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units --- --- V 0.022 --- V/C 15 20 m 21 28 --- 3.0 V --- 20 A --- 100 --- 200 nA --- -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 18A VGS = 4.5V, ID = 14A VDS = VGS, ID = 250A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 17 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 6.5 1.8 2.9 7.1 8.7 78 10 4.5 670 470 68 Max. Units Conditions --- S VDS = 10V, ID = 14A 9.7 ID = 14A --- nC VDS = 10V --- VGS = 4.5V --- VGS = 0V, VDS = 10V --- VDD = 10V --- ID = 14A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
72 14
Units
mJ A
Diode Characteristics
Symbol
IS
I SM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- 36 A --- 140 --- --- --- --- --- --- --- 1.3 0.88 --- 35 53 34 51 35 53 35 53 V ns nC ns nC
VSD trr Q rr trr Q rr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 18A, VGS = 0V TJ = 125C, IS = 18A, VGS = 0V TJ = 25C, IF = 18A, VR=10V di/dt = 100A/s TJ = 125C, IF = 18A, VR=10V di/dt = 100A/s
2
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IRLR3714/IRLU3714
10000
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP
1000
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
1000
100
100
VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.2V BOTTOM 2.0V TOP
10
10
1
2.0V
1
0.1
2.0V 20s PULSE WIDTH Tj = 25C
20s PULSE WIDTH Tj = 175C
0.1 100 0.1 1 10 100
0.01 0.1 1 10
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.5
I D = 36A
ID , Drain-to-Source Current ( )
2.0
100.00
RDS(on) , Drain-to-Source On Resistance
T J = 25C TJ = 175C
(Normalized)
1.5
1.0
10.00
0.5
1.00 2.0 4.0
VDS = 15V 20s PULSE WIDTH
6.0 8.0 10.0
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRLR3714/IRLU3714
10000
15
VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 14A
V DS = 16V V DS = 10V
12
C, Capacitance(pF)
Ciss Coss
VGS, Gate-to-Source Voltage (V)
1000
9
6
100
Crss
3
10 1 10 100
0 0 4 8 12 16 20
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
100.00
T J = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 100sec 10 1msec
10.00
1.00
T J = 25C
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10
10msec
VGS = 0V 0.10 0.0 1.0 2.0 3.0 VSD , Source-toDrain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR3714/IRLU3714
40
LIMITED BY PACKAGE
VGS
30
V DS
RD
D.U.T.
+
RG
-V DD
I D , Drain Current (A)
4.5V
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC)
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1
Thermal Response
SINGLE PULSE (THERMAL RESPONSE) Notes:
0.01 0.00001
1. Duty factor D = 2. Peak T t1/ t
2 J = P DM x Z thJC
P DM t1 t2 +T C
0.0001
0.001
0.01
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLR3714/IRLU3714
150 1 5V
RG
20V tp
D .U .T
IA S
E AS , Single Pulse Avalanche Energy (mJ)
VDS
L
D R IV E R
120
ID TOP 5.9A 10A 14A BOTTOM
+ V - DD
90
A
0 .0 1
60
Fig 12a. Unclamped Inductive Test Circuit
30
V (B R )D SS tp
0 25 50 75 100 125 150 175
Starting T , Junction Temperature J
( C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
4.5 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLR3714/IRLU3714
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRLR3714/IRLU3714
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 )
1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )
6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 3 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 2 .2 8 ( .0 9 0 ) 4 .5 7 ( .1 8 0 )
0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) M AMB N O TE S :
0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 )
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A"
PART NUMBER INT ERNATIONAL RECT IFIER LOGO
IRFU120 12 916A 34
AS S EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A
8
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IRLR3714/IRLU3714
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OUR C E 4 - D R A IN
6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 9 .6 5 (.3 8 0 ) 8 .8 9 (.3 5 0 ) 2 3 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 )
N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U TL IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X . + 0 .1 6 (.0 0 6 ).
3X
1 .1 4 (.0 45 ) 0 .7 6 (.0 30 )
3X
0 .8 9 ( .0 3 5 ) 0 .6 4 ( .0 2 5 ) M AMB
1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .58 (.0 2 3 ) 0 .46 (.0 1 8 )
2 .2 8 (.0 9 0 ) 2X
0 .2 5 (.0 1 0 )
I-Pak (TO-251AA) Part Marking Information
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9
IRLR3714/IRLU3714
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16 .3 ( .641 ) 15 .7 ( .619 )
12.1 ( .47 6 ) 11.9 ( .46 9 )
F E E D D IR E C T IO N
8.1 ( .318 ) 7.9 ( .312 )
FE E D D IR E C T IO N
N O T ES : 1 . C O N T R O LLIN G D IME N S IO N : M ILL IM ET E R . 2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N FO R MS T O E IA -481 & E IA -54 1.
1 3 IN C H
16 m m N O TE S : 1. O U TL IN E C O N F O R M S T O E IA -481 .
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1" square PCB ( FR-4 or G-10
Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Starting TJ = 25C, L = 0.69 mH
RG = 25, IAS = 14A.
Calculated continuous current based on maximum
allowable junction temperature; Package limitation current is 30A
Pulse width 400s; duty cycle 2%.
Data and specifications subject to change without notice. These products have been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/01
10
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